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| BC337/BC338 NPN General Purpose Transistor P b Lead(Pb)-Free BASE 1 3 2 2 COLLECTOR 1 TO-92 EMITTER 3 Maximum Ratings(TA=25C unless otherwise noted) Rating Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector Current Continuous Total Device Dissipation Alumina Substrate,TA=25C Operating Junction Temperature Range Storage Junction Temperature Range Symbol VCBO VCEO VEBO lC PD TJ Tstg BC337 50 45 5.0 800 625 BC338 30 25 5.0 Unit V V V mA mW/C C C -55 to +150 -55 to +150 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC=100A, I E=0 Collector-Emitter Breakdown Voltage IC=10mA, I B=0 Emitter-Base Breakdown Voltage IC=10A, IC=0 BC337 BC338 BC337 BC338 BC337 BC338 V(BR)CBO 50 30 45 25 5.0 V V(BR)CEO - - V Vdc V(BR)EBO - - http://www.weitron.com.tw WEITRON 1/3 30-Jun-06 BC337/BC338 ELECTRICAL CHARACTERISTICS(TA=25C unless otherwise noted) (Countinued) Min Typ Characteristics Symbol OFF CHARACTERISTICS Collector Cut-off Current VCE=40V, l B=0 VCE=20V, l B=0 Collector Cut-off Current VCB=45V, l E=0 VCB=25V, l E=0 Emitter Cutoff Current VEB=4.0V, l C=0 BC337 BC338 BC337 BC338 lCEO lCBO lEBO 0.2 0.1 0.1 A Max Unit A A ON CHARACTERISTICS DC Current Gain VCE=1V, l C=100mA VCE=1V, l C=300mA Collector-Emitter Saturation Voltage lC=500mA, l B=50mA Base-Emitter Saturation Voltage lC=500mA, l B=50mA Transition frequency VCE=5V, l C=10mA, f=100MHz hFE1 hFE2 VCE(sat) VBE(sat) fT 100 60 - - 630 - - - 0.7 1.2 V V MHz 210 - hFE Classification Classification hFE1 hFE2 16 100 ~ 250 60- 25 160 ~ 400 100- 40 250 ~ 630 170- http://www.weitron.com.tw WEITRON 2/3 30-Jun-06 BC327/BC328 Typical Characteristics -500 -20 mA - 5.0 A IB = - 4.5m = mA IB - 4.0 A IB = - 3.5m A = 3.0m IB A IB = - 2.5m A IB = 2.0m =IB IC mA , COLLECTOR CURRENT IC mA , COLLECTOR CURRENT IB= -400 -300 -200 -100 -0 -16 -12 -8 -4 A - 80 A - 70 IB= A - 60 IB= IB= P T A - 50 IB= - 40 =6 00 mW A 30A IB = IB = - 1.0mA IB = - 0.5mA mA - 1.5 PT = 60 0m IB = - W 0A IB = - 2 IB = 0 IB = - 10A -1 -2 -3 -4 -5 -10 -20 -30 IB = 0 -40 -50 VCE(V), COLLECTOR-EMITTER VOLTAGE VCE(V), COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Fig.2 Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -10 PULSE hFE, DC CURRENT GAIN V CE = - 2.0V IC = 10 IB PULSE V CE(sat) 100 - 1.0V -1 10 -0.1 V BE(sat) 1 -0.1 -1 -10 -100 -1000 -0.01 -0.1 -1 -10 -100 -1000 IC(mA), COLLECTOR CURRENT IC(mA), COLLECTOR CURRENT Figure 3. DC current Gain Fig.4 Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage fT[MHz], GAIN-BANDWIDTH PRODUCT -1000 1000 IC[mA], COLLECTOR CURRENT -100 VCE = -1V PULSE VCE = -5.0V -10 100 -1 -0.1 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 10 -1 -10 -100 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Fig.5 Base-Emitter On Voltage Fig.6 Gain Bandwidth Product http://www.weitron.com.tw WEITRON 3/4 29-Jun-06 BC337/BC338 TO-92 Outline Dimensions E unit:mm C J K G Dim A B C D E G H J K L TO-92 Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 H B L WEITRON http://www.weitron.com.tw D A 3/3 30-Jun-06 |
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